Key Features of 2N1711 Transistor
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- NPN silicon transistor for general-purpose and RF circuits
- Excellent high-frequency response for audio and signal use
- Moderate current handling and reliable power dissipation
- Low noise operation with stable DC gain
- Rugged TO-39 metal can ensures superior thermal stability
- Suitable for amplifier, oscillator, and driver circuit applications
Transistors
2N1711 Transistor Datasheet and Specifications
- Collector–Emitter Voltage (Vce): 50 V
- Collector–Base Voltage (Vcb): 75 V
- Collector Current (Ic): 500 mA
- Power Dissipation (Ptot): 800 mW
- DC Current Gain (hFE): 40 – 160 (typical)
- Transition Frequency (fT): 100 MHz (typical)
- Junction Temperature (Tj max): 200 °C
- Package Type: TO-39 Metal Can
- Polarity: NPN
- Pin Configuration: Emitter–Base–Collector (E–B–C)
