2SC2705 Toshiba Transistor Silicon NPN Transistor (NOS)
- Mounting Style: Through Hole
- Transistor Polarity: NPN
- Configuration: Single
- Collector- Emitter Voltage VCEO Max: 150 V
- Collector- Base Voltage VCBO: 150 V
- Emitter- Base Voltage VEBO: 5 V
- Collector-Emitter Saturation Voltage: 1.5 V
- Maximum DC Collector Current: 50 mA
- Pd – Power Dissipation: 800 mW
- Gain Bandwidth Product fT: 200 MHz
- Maximum Operating Temperature: + 150 C
- Series: 2SC2705
- Continuous Collector Current: 50 mA
- DC Collector/Base Gain hfe Min: 80
- DC Current Gain hFE Max: 240
- Product Type: BJTs – Bipolar Transistors
